PART |
Description |
Maker |
KMM53216000BK KMM53216000BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
KMM53616000BKG KMM53616000BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53616000CKG KMM53616000CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53616004CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
|
Samsung Semiconductor Co., Ltd.
|
KMM53632004CKG KMM53632004CK |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM372V1680BS KMM372V1600BK KMM372V1600BS KMM372V1 |
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 |
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 16M x 72-Bit EDO-DRAM Module (ECC - Module) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
M372F3280DJ3-C M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG[Samsung semiconductor]
|
AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP 16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http:// Austin Semiconductor, Inc Micross Components
|
AEPDH4M9L-10S-NP AEPDS4M9L-10S-NP AEPDH4M9L-12N-NP |
4M X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 SIMM-30 4M X 9 MULTI DEVICE DRAM MODULE, 120 ns, SMA30 SIMM-30
|
Linear Technology, Corp.
|
V54C3256164VBUS7PC V54C3256164VBUT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|